advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -60v lower gate charge r ds(on) 250m fast switching characteristic i d - 2.4a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 45 /w data and specifications subject to change without notice 201501212 halogen-free product 1 ap2311gk-hf 2.78 -55 to 150 parameter rating drain-source voltage - 60 gate-source voltage + 20 drain current, v gs @ 10v 3 - 2.4 parameter operating junction temperature range drain current, v gs @ 10v 3 - 2 pulsed drain current 1 -10 total power dissipation storage temperature range -55 to 150 thermal data d d s g sot-223 g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost- effectiveness. the sot-223 package is designed for suface mount application, large r heatsink than so-8 and sot package.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -60 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-1.8a - - 250 m v gs =-4.5v, i d =-1.4a - - 300 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-1a - 2 - s i dss drain-source leakage current v ds =-48v, v gs =0v - - -25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =-1a - 6 9.6 nc q gs gate-source charge v ds =-48v - 1 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 3 - nc t d(on) turn-on delay time v ds =-30v - 8 - ns t r rise time i d =-1a - 5 - ns t d(off) turn-off delay time r g =3.3 -22- ns t f fall time v gs =-10v - 3 - ns c iss input capacitance v gs =0v - 510 816 pf c oss output capacitance v ds =-25v - 50 - pf c rss reverse transfer capacitance f=1.0mhz - 40 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.2a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-1a, v gs =0v, - 30 - ns q rr reverse recovery charge di/dt=100a/s - 38 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 120 /w when mounted on min. copper pad. 2 ap2311gk-hf
ap2311gk-hf fig 1. typical output characteristics fig 2. typical output characteristics 20 fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 2 4 6 8 10 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c - 10v - 7.0v - 5.0v - 4.5v v g = - 3.0v 0 2 4 6 8 10 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =150 o c - 10v - 7.0v - 5.0v - 4.5v v g = - 3.0v 0.6 1.0 1.4 1.8 2.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -1.8 a v g =-10v 200 210 220 230 240 250 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -1.4 a t a =25 o c 0 0.5 1 1.5 2 0 0.4 0.8 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th)
ap2311gk-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. drain current v.s. ambient fig 12. gate charge waveform temperature 4 0 2 4 6 8 10 04812 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-1a v ds =-48v 10 130 250 370 490 610 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 120 /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 0.5 1 1.5 2 2.5 25 50 75 100 125 150 t a , ambient temperature ( o c ) -i d , drain current (a) operation in this area limited by r ds(on) q v g -4.5v q gs q gd q g charge
ap2311gk-hf marking information 5 date code (ywwsss) y last digit of the year ww week sss sequence part numbe r 2311gk ywwsss meet rohs requirement for low voltage mosfet only package code
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